Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy

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    • Publication Information:
      EDP Sciences, 2004.
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    • Abstract:
      Defects in the Si layered structures, Si:H(D), prepared by implantation with H 2 + /D + , and their changes resulting from the treatment under enhanced pressure (HP), were investigated by X-ray diffraction and transmission electron microscopy (XTEM). Such treatment affects out-diffusion of hydrogen (deuterium) as well as the shape and concentration of the H(D)-filled cavities. The relation between X-ray and XTEM results is discussed.
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